2SB075030MLJL 2SB075030MLJL schottky barrier diode chips description ? 2SB075030MLJL is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ? low power losses, high efficiency; ? guard ring construction for transient protection; ? low forward voltage drop; ? high esd capability; ? high surge capability; ? packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits.; ? chip size:750 m x 750 m; ? chip thickness: 21020 m; chip topography and dimensions la: chip size: 750 m; lb: pad size: 655 m; ordering specifications product name specification 2SB075030MLJL for au and alsi wire bonding package absolute maximum ratings parameters symbol ratings unit maximum repetitive p eak reverse voltage v rrm 30 v average forward rectified current i fav 1.0 a peak forward surge current@8.3ms i fsm 5.5 a maximum operation junction temperature t j 125 c storage temperature range t stg -40~125 c electrical characteristics (t amb =25 c) parameters symbol test conditions min. max. unit reverse voltage v br i r =100 a 30 -- v v f1 i f =0.7a -- 0.45 v forward voltage v f2 i f =1.0a -- 0.5 v reverse current i r v r =30v -- 60 a hangzhou silan microelectronics co.,ltd rev:1.0 2008.07.28 http://www.silan.com.cn page 1 of 1
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